the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. npn silicon transistor 2sC2570A high frequency low noise amplifier npn silicon epitaxial transistor document no. p10404ej3v0ds00 (3rd edition) date published november 1999 n cp(k) printed in japan data sheet 1980, 1999 description the 2sC2570A is designed for use in low noise amplifier of vhf & uhf stages. features ? low noise and high gain : nf = 1.5 db typ., ga = 8 db typ. @f = 1.0 ghz, v ce = 10 v, i c = 5.0 ma ? wide dynamic range : nf = 1.9 db, ga = 9 db @f = 1 ghz, v ce = 10 v, i c = 15 ma ordering information part number quantity 2sC2570A loose products (500 pcs) 2sC2570A-t taping products (box type) (2 500 pcs) remark to order evaluation samples, please contact your nec sales office (available in 500-pcs units). absolute maximum ratings (t a = +25 c) parameter symbol ratings unit collector to base voltage v cbo 25 v collector to emitter voltage v ceo 12 v emitter to base voltage v ebo 3.0 v collector current i c 70 ma total power dissipation p tot 600 mw junction temperature t j 150 c storage temperature t stg C65 to +150 c
data sheet p10404ej3v0ds00 2 2sC2570A electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc current gain h fe note 1 v ce = 10 v, i c = 20 ma 40 C 200 C gain bandwidth product f t v ce = 10 v, i c = 20 ma C 5.0 C ghz output capacitance c ob note 2 v cb = 10 v, i e = 0, f = 1.0 mhz C 0.7 0.9 pf insertion power gain | s 21e | 2 v ce = 10 v, i c = 20 ma, f = 1.0 ghz 8 10 C db noise figure nf v ce = 10 v, i c = 5 ma, f = 1.0 ghz C 1.5 3.0 db maximum available gain mag v ce = 10 v, i c = 20 ma, f = 1.0 ghz C 11.5 C db collector cutoff current i cbo v cb = 15 v, i e = 0 C C 0.1 m a emitter cutoff current i ebo v eb = 2.0 v, i c = 0 C C 0.1 m a notes 1. pulse measurement: pw 350 m s, duty cycle 2% 2. the emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
data sheet p10404ej3v0ds00 3 2sC2570A typical characteristics (t a = +25 c) free air total power dissipation p t (mw) 600 400 200 0 50 100 operating ambient temperature t a ( c) 150 200 v ce = 10 v v ce = 10 v dc current gain h fe 200 100 50 20 10 0.5 1 5 collector current i c (ma) 10 50 total power dissipation vs. ambient temperature dc current gain vs. collector current v ce = 10 v collector current i c (ma) 50 10 5 0.5 1 0.5 0.6 0.7 base to emitter voltage v be (v) 0.8 0.9 collector current vs. base to emitter voltage gain bandwidth product f t (gh z ) 7 5 2 1 0.5 0.2 0.1 0.5 1 5 collector current i c (ma) 10 70 50 gain bandwidth product vs. collector current v ce = 10 v f = 1.0 gh z insertion gain s 21e 2 (db) 15 10 5 0 0.5 1 5 collector current i c (ma) 10 70 50 insertion gain vs. collector current
data sheet p10404ej3v0ds00 4 2sC2570A f = 1.0 mh z output capacitance c ob (pf) input capacitance c ib (pf) 2 1 0.5 0.3 0 0.5 1 2 5 collector to base voltage v cb (v) emitter to base voltage v eb (v) 10 30 20 output and input capacitance vs. reverse voltage v ce = 10 v f = 1.0 gh z noise figure nf (db) 7 6 5 4 3 2 1 0 0.5 1 10 5 collector current i c ( m a) 50 70 noise figure vs. collector current v ce = 10 v i c = 5 ma 20 10 0 0.1 1.0 0.2 0.4 insertion power gain, maximum available gain vs. frequency 0.6 2 0.8 c ib c ob s 21e 2 g max frequency f (gh z ) insertion power gain s 21e 2 (db) maximum available gain g max. (db) v ce = 10 v i c = 20 ma 20 10 0 0.1 1.0 0.2 0.4 insertion power gain, maximum available gain vs. frequency 0.6 2 0.8 s 21e 2 frequency f (gh z ) insertion power gain s 21e 2 (db) maximum available gain g max. (db) g max w a v e l e n g t h s t o w a r d g e n e r a t o r a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s d a o l d r a w o t s h t g n e l e v a w 0 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 0.2 0.1 0.3 0.4 0.5 0 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 resistance component r zo ? ? p o s i t i v e r e a c t a n c e c o m p o n e n t n e g a t i v e r e a c t a n c e c o m p o n e n t - jx zo ? ? + jx zo ? ? 1.5gh z 1.5gh z s 22e s 11e 1.0 1.0 0.8 0.6 0.4 0.4 0.2 0.2 w a v e l e n g t h s t o w a r d g e n e r a t o r a n g l e o f r e f l e c t i o n c o e f f i c i e n t i n d e g r e e s d a o l d r a w o t s h t g n e l e v a w 0 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.14 0.13 0.12 0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.36 0.37 0.38 0.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 - 160 - 150 - 140 - 130 - 120 - 110 - 100 - 90 - 80 - 70 - 60 - 50 - 40 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 0.2 0.1 0.3 0.4 0.5 0 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 50 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 resistance component r zo ? ? p o s i t i v e r e a c t a n c e c o m p o n e n t n e g a t i v e r e a c t a n c e c o m p o n e n t - jx zo ? ? + jx zo ? ? 1.5gh z 1.5gh z s 22e s 11e 1.0 1.0 0.8 0.2 0.4 0.6 0.4 0.2 s-parameter v ce = 10 v i c = 5 ma z 0 = 50 w s-parameter v ce = 10 v i c = 20 ma z 0 = 50 w
data sheet p10404ej3v0ds00 5 2sC2570A package dimension to-92 (unit:mm) 5.2 max. 0.5 1.27 1. base 2. emitter 3. collector eiaj jedec iec : sc-43b : to-92 : pa33 2.54 2 13 5.5 max. 14.0 min. 4.2 max. 1.77 max.
data sheet p10404ej3v0ds00 6 2sC2570A [memo]
data sheet p10404ej3v0ds00 7 2sC2570A [memo]
2sC2570A the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8
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